Electronic display with hybrid in-pixel and external compensation

ABSTRACT

A display pixel is provided that is operable to support hybrid compensation scheme having both in-pixel threshold voltage canceling and external threshold voltage compensation. The display may include multiple p-type silicon transistors with at least one n-type semiconducting-oxide transistor and one storage capacitor. An on-bias stress phase may be performed prior to a threshold voltage sampling and data programming phase to mitigate hysteresis and improve first frame response. In low refresh rate displays, a first additional on-bias stress operation can be performed separate from the threshold voltage sampling and data programming phase during a refresh frame and a second additional on-bias stress operation can be performed during a vertical blanking frame. The display pixel may be configured to receive an initialization voltage and an anode reset voltage, either of which can be dynamically tuned to match the stress of the first and second additional on-bias stress operations to minimize flicker.

This application claims the benefit of provisional patent applicationNo. 62/791,522, filed Jan. 11, 2019, which is hereby incorporated byreference herein in its entirety.

BACKGROUND

This relates generally to electronic devices with displays and, moreparticularly, to display driver circuitry for displays such asorganic-light-emitting diode displays.

Electronic devices often include displays. For example, cellulartelephones and portable computers include displays for presentinginformation to users.

Displays such as organic light-emitting diode displays have an array ofdisplay pixels based on light-emitting diodes. In this type of display,each display pixel includes a light-emitting diode and thin-filmtransistors for controlling application of a signal to thelight-emitting diode to produce light.

An organic light-emitting diode display pixel includes a drive thin-filmtransistor connected to a data line via an access thin-film transistor.The access transistor may have a gate terminal that receives a scansignal via a corresponding scan line. Image data on the data line can beloaded into the display pixel by asserting the scan signal to turn onthe access transistor. The display pixel further includes a currentsource transistor that provides current to the organic light-emittingdiode to produce light.

Transistors in an organic light-emitting diode display pixel may besubject to process, voltage, and temperature (PVT) variations. Due tosuch variations, transistor threshold voltages between different displaypixels may vary. Variations in transistor threshold voltages can causethe display pixels to produce amounts of light that do not match adesired image. It is within this context that the embodiments hereinarise.

SUMMARY

An electronic device may include a display having an array of displaypixels. The display pixels may be organic light-emitting diode displaypixels. Each display pixel may include an organic light-emitting diode(OLED) that emits light, a drive transistor coupled in series with theOLED, first and second emission transistors coupled in series with thedrive transistor and the OLED, a semiconducting-oxide transistor coupledbetween gate and drain terminals of the drive transistor, a singlestorage capacitor coupled to the gate terminal of the drive transistor,a data loading transistor coupled between the source terminal of thedrive transistor and a data line, an initialization transistor coupledto the drain terminal of the drive transistor, and an anode resettransistor coupled to the anode terminal of the OLED. Thesemiconducting-oxide transistor may be an n-type transistor, whereas allremaining transistors in the pixel may be p-type silicon transistors(e.g., PMOS LTPS thin-film transistors).

During normal operation, a display pixel may undergo an initializationphase during which the initialization transistor and/or the anode resettransistor is turned on to reset the display pixel. The initializationphase may be followed by one or more on-bias stress phases during whichthe data loading transistor is activated to load a data voltage at leastpartially onto the drive transistor. The on-bias stress phase may beautomatically followed by a threshold voltage sampling and data loadingphase, which is then followed by an emission phase. During the emissionphase, the current flowing through the OLED will be independent of thedrive transistor threshold voltage due to in-pixel threshold voltagecancellation.

Performing the on-bias stress phase prior to the threshold voltagesampling can help mitigate any undesired hysteresis effects and improvefirst frame response. If desired, the emission phase can be optionallyshortened to help reduce potential mismatch between the negative biastemperature stress (NBTS) and the positive bias temperature stress(PBTS) associated with the semiconducting-oxide transistor. If desired,the semiconducting-oxide transistor can also be turned on when the dataloading transistor is turned on to lengthen the on-bias stress phase.The display pixel is also operable to support external current sensing(e.g., by turning on the data loading transistor and the initializationtransistor) while the display is off or idle.

The display pixel may also be configured to support low refresh rateoperation (e.g., 1 Hz, 2 Hz, less than 30 Hz, less than 60 Hz, etc.).For low refresh rate operation, a short refresh period is followed by amuch longer vertical blanking period. During the refresh period, a firston-bias stress phase may be performed immediately followed by a firstthreshold voltage sampling and data programming phase; a second on-biasstress phase may be performed after the first threshold voltage samplingand data programming phase; and a third on-bias stress phase may then beperformed after the second on-bias stress phase, which is immediatelyfollowed by a second threshold voltage sampling and data programmingphase. An emission phase can then follow the second threshold voltagesampling and data programming phase.

During the vertical blanking period, at least a fourth on-bias stressphase that matches the second on-bias stress phase can be performed toreduce flicker. The initialization voltage may be dynamically adjustedduring the second and fourth on-bias stress phases to minimize anypotential mismatch. The anode reset voltage may also be dynamicallyadjusted when switching from the refresh period to the vertical blankingperiod to help improve low refresh rate performance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an illustrative electronic device having adisplay in accordance with an embodiment.

FIG. 2 is a diagram of an illustrative display having an array oforganic light-emitting diode display pixels coupled to compensationcircuitry in accordance with an embodiment.

FIG. 3 is a circuit diagram of an illustrative display pixel configuredto support in-pixel threshold voltage compensation and externalthreshold voltage compensation in accordance with an embodiment.

FIG. 4 is a timing diagram illustrating how multiple on-bias stressoperations can be performed with threshold voltage sampling operationsto help reduce hysteresis impact in accordance with an embodiment.

FIG. 5 is a diagram showing how at least some row control lines can beshared between pixels in adjacent rows in accordance with an embodiment.

FIG. 6 is a diagram showing how the on-period for at least some rowcontrol signals can be extended to help balance negative biastemperature stress (NBTS) and positive bias temperature stress (PBTS) inaccordance with an embodiment.

FIG. 7 is a timing diagram illustrating an on-bias stress operation thatis optimized to mitigate first frame dimming in accordance with anembodiment.

FIG. 8A is a diagram showing how a display pixel of the type shown inFIG. 3 can be configured to support external current sensing operationsin accordance with an embodiment.

FIG. 8B is a timing diagram showing the behavior of relevant row controlsignals to perform an external current sensing operation in accordancewith an embodiment.

FIG. 9 is a diagram of a low refresh rate display driving scheme inaccordance with an embodiment.

FIG. 10 is a circuit diagram of an illustrative display pixel configuredto reduce flicker at low refresh rates in accordance with an embodiment.

FIG. 11 is a timing diagram illustrating how an initialization voltagecan be dynamically adjusted so that the dominant on-bias stress duringthe refresh phase and the on-bias stress during the vertical blankingphase are well-matched in accordance with an embodiment.

FIG. 12 is a timing diagram illustrating how a voltage sampling and dataprogramming operation can be inserted after the dominant on-bias stressto improve first frame response in accordance with an embodiment.

FIG. 13 is a timing diagram illustrating how an initialization voltageand/or an anode reset voltage can be dynamically adjusted to match theon-bias stress during the refresh phase and the vertical blanking phasein accordance with an embodiment.

FIG. 14A is a diagram showing how a display pixel of the type shown inFIG. 10 can be configured to support external current sensing operationsin accordance with an embodiment.

FIG. 14B is a timing diagram showing the behavior of relevant rowcontrol signals to perform an external current sensing operation inaccordance with an embodiment.

FIGS. 15 and 16 are timing diagrams illustrating other ways ofperforming on-bias stress during the refresh and vertical blankingphases while dynamically adjusting the initialization and/or anode resetvoltage in accordance with certain embodiments.

FIG. 17A is a circuit diagram of another suitable implementation of anillustrative display pixel circuit in accordance with an embodiment.

FIG. 17B is a timing diagram illustrating relevant waveforms foroperating the pixel circuit shown in FIG. 17A in accordance with anembodiment.

FIG. 18A is a circuit diagram of yet another suitable implementation ofan illustrative display pixel circuit in accordance with an embodiment.

FIG. 18B is a timing diagram illustrating relevant waveforms foroperating the pixel circuit shown in FIG. 18A in accordance with anembodiment.

FIG. 19A is a circuit diagram of yet another suitable implementation ofan illustrative display pixel circuit in accordance with an embodiment.

FIG. 19B is a timing diagram illustrating relevant waveforms foroperating the pixel circuit shown in FIG. 19A in accordance with anembodiment.

FIG. 20A is a circuit diagram of yet another suitable implementation ofan illustrative display pixel circuit in accordance with an embodiment.

FIG. 20B is a timing diagram illustrating relevant waveforms foroperating the pixel circuit shown in FIG. 20A in accordance with anembodiment.

FIG. 21A is a circuit diagram of yet another suitable implementation ofan illustrative display pixel circuit in accordance with an embodiment.

FIG. 21B is a timing diagram illustrating relevant waveforms foroperating the pixel circuit shown in FIG. 21A in accordance with anembodiment.

DETAILED DESCRIPTION

An illustrative electronic device of the type that may be provided withan organic light-emitting diode (OLED) display is shown in FIG. 1. Asshown in FIG. 1, electronic device 10 may have control circuitry 16.Control circuitry 16 may include storage and processing circuitry forsupporting the operation of device 10. The storage and processingcircuitry may include storage such as hard disk drive storage,nonvolatile memory (e.g., flash memory or otherelectrically-programmable-read-only memory configured to form asolid-state drive), volatile memory (e.g., static or dynamicrandom-access-memory), etc. Processing circuitry in control circuitry 16may be used to control the operation of device 10. The processingcircuitry may be based on one or more microprocessors, microcontrollers,digital signal processors, baseband processors, power management units,audio codec chips, application-specific integrated circuits,programmable integrated circuits, etc.

Input-output circuitry in device 10 such as input-output devices 12 maybe used to allow data to be supplied to device 10 and to allow data tobe provided from device 10 to external devices. Input-output devices 12may include buttons, joysticks, click wheels, scrolling wheels, touchpads, key pads, keyboards, microphones, speakers, tone generators,vibrators, cameras, sensors, light-emitting diodes and other statusindicators, data ports, etc. A user can control the operation of device10 by supplying commands through input-output devices 12 and may receivestatus information and other output from device 10 using the outputresources of input-output devices 12.

Input-output devices 12 may include one or more displays such as display14. Display 14 may be a touch screen display that includes a touchsensor for gathering touch input from a user or display 14 may beinsensitive to touch. A touch sensor for display 14 may be based on anarray of capacitive touch sensor electrodes, acoustic touch sensorstructures, resistive touch components, force-based touch sensorstructures, a light-based touch sensor, or other suitable touch sensorarrangements.

Control circuitry 16 may be used to run software on device 10 such asoperating system code and applications. During operation of device 10,the software running on control circuitry 16 may display images ondisplay 14 in input-output devices.

FIG. 2 shows display 14 and associated display driver circuitry 15.Display 14 includes structures formed on one or more layers such assubstrate 24. Layers such as substrate 24 may be formed from planarrectangular layers of material such as planar glass layers. Display 14may have an array of display pixels 22 for displaying images to a user.The array of display pixels 22 may be formed from rows and columns ofdisplay pixel structures on substrate 24. These structures may includethin-film transistors such as polysilicon thin-film transistors,semiconducting oxide thin-film transistors, etc. There may be anysuitable number of rows and columns in the array of display pixels 22(e.g., ten or more, one hundred or more, or one thousand or more).

Display driver circuitry such as display driver integrated circuit 15may be coupled to conductive paths such as metal traces on substrate 24using solder or conductive adhesive. If desired, display driverintegrated circuit 15 may be coupled to substrate 24 over a path such asa flexible printed circuit or other cable. Display driver integratedcircuit 15 (sometimes referred to as a timing controller chip) maycontain communications circuitry for communicating with system controlcircuitry 16 over path 125. Path 125 may be formed from traces on aflexible printed circuit or other cable. Control circuitry 16 (seeFIG. 1) may be located on a main logic board in an electronic devicesuch as a cellular telephone, computer, television, set-top box, mediaplayer, portable electronic device, or other electronic equipment inwhich display 14 is being used.

During operation, the control circuitry may supply display driverintegrated circuit 15 with information on images to be displayed ondisplay 14. To display the images on display pixels 22, display driverintegrated circuit 15 may supply clock signals and other control signalsto display driver circuitry such as row driver circuitry 18 and columndriver circuitry 20. For example, data circuitry 13 may receive imagedata and process the image data to provide pixel data signals to display14. The pixel data signals may be demultiplexed by column drivercircuitry 20 and pixel data signals D may be routed to each pixel 22over data lines 26 (e.g., to each red, green, or blue pixel). Row drivercircuitry 18 and/or column driver circuitry 20 may be formed from one ormore integrated circuits and/or one or more thin-film transistorcircuits.

Display driver integrated circuit 15 may include compensation circuitry17 that helps to compensate for variations among display pixels 22 suchas threshold voltage variations. Compensation circuitry 17 may, ifdesired, also help compensate for transistor aging. Compensationcircuitry 17 may be coupled to pixels 22 via path 19, switchingcircuitry 21, and paths 23. Compensation circuitry 17 may include sensecircuitry 25 and bias circuitry 27. Sense circuitry 25 may be used insensing (e.g., sampling) voltages from pixels 22. During senseoperations, switching circuitry 21 may be configured to electricallycouple sense circuitry 25 to one or more selected pixels 22. Forexample, compensation circuitry 17 may produce control signal CTL toconfigure switching circuitry 21. Sense circuitry 25 may samplecurrents, voltages or other desired signals from the pixels over path19, switching circuitry 21, and paths 23. Bias circuitry 27 may includeone or more driver circuits for driving reference or bias voltages ontonodes of pixels 22. For example, switching circuitry 21 may beconfigured to electrically couple path 19 to one or more selected pixels22. In this scenario, bias circuitry 27 may provide reference signals tothe selected pixels. The reference signals may bias nodes at theselected pixels at desired voltages for the sensing operations performedby sense circuitry 25.

Compensation circuitry 17 may perform compensation operations on pixels22 using bias circuitry 27 and sense circuitry 25 to generatecompensation data that is stored in storage 29. Storage 29 may, forexample, be static random-access memory (SRAM). In the example of FIG.2, storage 29 is on-chip storage. If desired, storage 29 may be off-chipstorage such as non-volatile storage (e.g., non-volatile memory thatmaintains stored information even when the display is powered off). Thecompensation data stored in storage 29 may be retrieved by datacircuitry 13 during display operations. Data circuitry 13 may processthe compensation data along with incoming digital image data to generatecompensated data signals for pixels 22.

Data circuitry 13 may include gamma circuitry 44 that provides a mappingof digital image data to analog data signals at appropriate voltagelevels for driving pixels 22. Multiplexer 46 receives a set of possibleanalog data signals from gamma circuitry 44 and is controlled by thedigital image data to select an appropriate analog data signal for thedigital image data. Compensation data retrieved from storage 29 may beadded to (or subtracted from) the digital image data by adder circuit 48to help compensate for transistor variations (e.g., threshold voltagevariations, transistor aging variations, or other types of variations)between different display pixels 22. This example in which compensationdata is added as an offset to digital input image data is merelyillustrative. In general, data circuitry 13 may process compensationdata along with image data to produce compensated analog data signalsfor driving pixels 22.

In contrast to techniques that focus on performing in-pixel thresholdcanceling (such as by performing an initialization phase followed by athreshold sampling phase), performing sensing and compensation in thisway using compensation circuitry 17 outside of each pixel 22 allows forhigher refresh rates (e.g., greater than 60 Hz refresh rate, at least120 Hz refresh rate, etc.) and is sometimes referred to as “external”compensation. External variation compensation may be performed in thefactory, in real time (e.g., during blanking intervals betweensuccessive image frames), or when the display is idle (as examples). Inaccordance with at least some embodiments, display 14 may be operatedusing a hybrid compensation scheme in which in-pixel threshold cancelingis implemented during normal display operation and external thresholdcompensation is implemented while display 14 is turned off. Configuredin this way, the in-pixel compensation can help mitigate thresholdvoltage hysteresis (which improves first frame response), whereas theexternal compensation can help mitigate aging and other transistorreliability issues.

Row driver circuitry 18 may be located on the left and right edges ofdisplay 14, on only a single edge of display 14, or elsewhere in display14. During operation, row driver circuitry 18 may provide row controlsignals on horizontal lines 28 (sometimes referred to as row lines,“scan” lines, and/or “emission” lines). Row driver circuitry 18 mayinclude scan line driver circuitry for driving the scan lines andemission line driver circuitry for driving the emission lines. The scanline and emission line driver circuitry may sometimes be referred to asgate driver circuitry.

Demultiplexing circuitry 20 may be used to provide data signals D fromdisplay driver integrated circuit (DIC) 15 onto a plurality ofcorresponding vertical lines 26. Demultiplexing circuitry 20 maysometimes be referred to as column driver circuitry, data line drivercircuitry, or source driver circuitry. Vertical lines 26 are sometimesreferred to as data lines. During display operations, display data maybe loaded into display pixels 22 using lines 26.

Each data line 26 is associated with a respective column of displaypixels 22. Sets of horizontal signal lines 28 run horizontally acrossdisplay 14. Each set of horizontal signal lines 28 is associated with arespective row of display pixels 22. The number of horizontal signallines in each row is determined by the number of transistors in thedisplay pixels 22 that are being controlled independently by thehorizontal signal lines. Display pixels of different configurations maybe operated by different numbers of scan lines.

Row driver circuitry 18 may assert control signals such as scan andemission signals on the row lines 28 in display 14. For example, drivercircuitry 18 may receive clock signals and other control signals fromdisplay driver integrated circuit 15 and may, in response to thereceived signals, assert scan control signals and an emission controlsignal in each row of display pixels 22. Rows of display pixels 22 maybe processed in sequence, with processing for each frame of image datastarting at the top of the array of display pixels and ending at thebottom of the array (as an example). While the scan lines in a row arebeing asserted, control signals and data signals that are provided tocolumn driver circuitry 20 by DIC 15 may direct column driver circuitry20 to demultiplex and drive associated data signals D (e.g., compensateddata signals provided by data circuitry 13) onto data lines 26 so thatthe display pixels in the row will be programmed with the display dataappearing on the data lines D. The display pixels can then display theloaded display data.

The external pixel compensation scheme described above may involve usingsense circuitry 25 to perform current sensing on selected displaypixels. In general, the amount of emission current flowing through eachdisplay pixel is dependent on the threshold voltage of a “drive”thin-film transistor (TFT) within that display pixel. The thresholdvoltage of the drive transistor may also vary depending on the currentvalue of the gate-to-source voltage Vgs of the drive transistor. Forexample, the drive transistor threshold voltage may exhibit a firstaverage level when Vgs is being raised from low to high, but may exhibita second average level that is different than the first average levelwhen Vgs is being lowered from high to low, thus yielding differentcurrent-voltage (I-V) characteristic curves. This dependence of thethreshold voltage on the actual Vgs value is sometimes referred to astransistor “hysteresis,” and if care is not taken, this hysteresis cannegatively impact the accuracy of the current sensing operationsperforming by circuitry 25.

FIG. 3 is a circuit diagram of an illustrative organic light-emittingdiode display pixel 22 in display 14 that is operable to support bothin-pixel threshold voltage compensation and external threshold voltagecompensation. As shown in FIG. 3, display pixel 22 may include a storagecapacitor Cst, an n-type (i.e., n-channel) transistor such assemiconducting-oxide transistor Toxide, and p-type (i.e., p-channel)transistors such as a drive transistor Tdrive, a data loading transistorTdata, a first emission transistor Tem1, second emission transistorTem2, a first initialization transistor Tini1, and a secondinitialization transistor Tini2. While transistor Toxide is formed usingsemiconducting oxide (e.g., a transistor with a channel formed fromsemiconducting oxide such as indium gallium zinc oxide or IGZO), theother p-channel transistors may be thin-film transistors formed from asemiconductor such as silicon (e.g., polysilicon channel deposited usinga low temperature process, sometimes referred to as LTPS orlow-temperature polysilicon). Semiconducting-oxide transistors exhibitrelatively lower leakage than silicon transistors, so implementingtransistor Toxide as a semiconducting-oxide transistor will help reduceflicker (e.g., by preventing current from leaking away from the gateterminal of drive transistor Tdrive).

In another suitable arrangement, transistors Toxide and Tdrive may beimplemented as semiconducting-oxide transistors while the remainingtransistors Tdata, Tem1, Tem2, Tini1, and Tini2 are LTPS transistors.Transistor Tdrive serves as the drive transistor and has a thresholdvoltage that is critical to the emission current of pixel 22. Since thethreshold voltage of transistor Tdrive may experience hysteresis,forming the drive transistor as a top-gate semiconducting-oxidetransistor can help reduce the hysteresis (e.g., a top-gate IGZOtransistor experiences less Vth hysteresis than a silicon transistor).If desired, any of the remaining transistors Tdata, Tem1, Tem2, Tini1,and Tini2 may be implemented as semiconducting-oxide transistors.Moreover, any one or more of the p-channel transistors may be n-type(i.e., n-channel) thin-film transistors.

Display pixel 22 may include an organic light-emitting diode (OLED) 304.A positive power supply voltage VDDEL may be supplied to positive powersupply terminal 300, and a ground power supply voltage VSSEL may besupplied to ground power supply terminal 302. Positive power supplyvoltage VDDEL may be 3 V, 4 V, 5 V, 6 V, 7 V, 2 to 8 V, or any suitablepositive power supply voltage level. Ground power supply voltage VSSELmay be 0 V, −1 V, −2 V, −3 V, −4 V, −5 V, −6V, −7 V, or any suitableground or negative power supply voltage level. The state of drivetransistor Tdrive controls the amount of current flowing from terminal300 to terminal 302 through diode 304, and therefore the amount ofemitted light 306 from display pixel 22. Organic light-emitting diode304 may have an associated parasitic capacitance C_(OLED) (not shown).

Terminal 308 may be used to supply an initialization voltage Vini (e.g.,a negative voltage such as −1 V, −2 V, −3 V, −4V, −5 V, −6 V, or othersuitable voltage) to assist in turning off diode 304 when diode 304 isnot in use. Terminal 308 is therefore sometimes referred to as theinitialization line. Control signals from display driver circuitry suchas row driver circuitry 18 of FIG. 2 are supplied to control terminalssuch as row control terminals 312, 314-1, 314-2, and 314-2′. Row controlterminal 312 may serve as an emission control terminal (sometimesreferred to as an emission line or emission control line), whereas rowcontrol terminals 314-1 and 314-2 may serve as first and second scancontrol terminals (sometimes referred to as scan lines or scan controllines). Emission control signal EM may be supplied to terminal 312. Scancontrol signals Scan1 and Scan2 may be applied to scan terminals 314-1and 314-2, respectively. Scan control signal Scan2 from a preceding rowin the array of display pixels may be applied to scan terminal 314-2′. Adata input terminal such as data signal terminal 310 is coupled to arespective data line 26 of FIG. 1 for receiving image data for displaypixel 22. Data terminal 310 may also be referred to as the data line.

Control signals EM(n), Scan2(n), and Scan2(n−1) for modulating thep-type silicon transistors can be driven low to turn on thosetransistors (since p-type transistors are “active-low” devices) anddriven high to turn them on. Control signals EM(n), Scan2(n), andScan2(n−1), when asserted, may generally be driven to a voltage levelthat is lower than VSSEL (e.g., to overdrive the correspondingtransistors). As an example, if VSSEL is equal to −3.5 V, signals EM(n),Scan2(n), and Scan2(n−1) might be driven to −9 V when asserted. Controlsignals EM(n), Scan2(n), and Scan2(n−1), when deasserted, may generallybe driven to a voltage level that is higher than VDDEL (e.g., to furtherdeactivate the corresponding transistors to help minimize leakage). Asan example, if VDDEL is equal to 4.5 V, signals EM(n), Scan2(n), andScan2(n−1) might be driven to 7 V when deasserted.

Control signal Scan1 (n) for modulating the n-type semiconducting-oxidetransistor Toxide can be driven high to turn on transistor Toxide (sincen-type transistors are “active-high” devices) and driven low to turn offtransistor Toxide. Since Scan1 independently controls transistor Toxide,the high and low levels of Scan1 can be adjusted to enhance oxide TFTdriving capability. Control signal Scan1 (n), when asserted, maygenerally be driven to a voltage level that is higher than VDDEL tooverdrive transistor Toxide. As an example, if VDDEL is equal to 5 V,signal Scan1 (n) might be driven to 12 V when asserted. Control signalScan1 (n), when deasserted, may generally be driven to a voltage levelthat is lower than VSSEL to minimize leakage through transistor Toxide.As an example, if VSSEL is equal to −2 V, signal Scan1 (n) might bedriven to −6 V when deasserted. The disclosed high and low voltagelevels for each of these row control signals are merely illustrative andcan be adjusted to other suitable voltage levels to support the desiredmode of operation.

In the example of FIG. 3, transistors Tem1, Tdrive, Tem2, and OLED 304may be coupled in series between power supply terminals 300 and 302. Inparticular, first emission control transistor Tem1 may have a sourceterminal that is coupled to positive power supply terminal 300, a gateterminal that receives emission control signal EM(n) via emission line312, and a drain terminal (labeled as Node1). The notation “(n)”indicates that the corresponding signal is generated using a gate driverassociated with that row of display pixels. The terms “source” and“drain” terminals of a transistor can sometimes be used interchangeablyand may therefore sometimes be referred to as “source-drain” terminals.

Drive transistor Tdrive may have a source terminal coupled to Node1, agate terminal (labeled as Node2), and a drain terminal (labeled asNode3). Second emission control transistor Tem2 may have a sourceterminal coupled to Node3, a gate terminal that also receives emissioncontrol signal EM(n) via emission line 312, and a drain terminal(labeled as Node4) coupled to ground power supply terminal 302 vialight-emitting diode 304. Configured in this way, emission controlsignal EM(n) can be asserted (e.g., driven low or temporarily pulsedlow) to turn on transistors Tem1 and Tem2 during an emission phase toallow current to flow through light-emitting diode 304.

Storage capacitor Cst may have a first terminal that is coupled topositive power supply line 300 and a second terminal that is coupled toNode2. Image data that is loaded into pixel 22 can be at least bepartially stored on pixel 22 by using capacitor Cst to hold chargethroughout the emission phase. Transistor Toxide may have a sourceterminal coupled to Node2, a gate terminal configured to receive scancontrol signal Scan1 (n) via scan line 314-2, and a drain terminalcoupled to Node3. Signal Scan1 (n) may be asserted (e.g., driven high ortemporarily pulsed high) to turn on n-type transistor Toxide to shortthe drain and gate terminals of transistor Tdrive. A transistorconfiguration where the gate and drain terminals are shorted issometimes referred to as being “diode-connected.”

Data loading transistor Tdata may have a source terminal coupled to dataline 310, a gate terminal configured to receive scan control signalScan2(n) via scan line 314-2, and a drain terminal coupled to Node1.Configured in this way, signal Scan2(n) can be asserted (e.g., drivenlow or temporarily pulsed low) to turn on transistor Tdata, which willallow a data voltage from data line 310 to be loaded onto Node1.

Transistor Tini1 may have a source terminal coupled to Node3, a gateterminal configured to receive scan control signal Scan2(n−1) via scanline 314-2′, and a drain terminal coupled to initialization line 308.The notation “(n−1)” indicates that the corresponding signal isgenerated using a gate driver associated with a preceding row of displaypixels (e.g., Scan2(n−1) represents the Scan2 signal that controlstransistors Tdata in the immediately preceding row). Transistor Tini2may have a source terminal coupled to Node4, a gate terminal configuredto receive scan control signal Scan2(n−1) via scan line 314-2′, and adrain terminal coupled to initialization line 308. Configured in thisway, scan control signal Scan2(n−1) can be asserted (e.g., driven low ortemporarily pulsed low) to turn on transistors Tini1 and Tini2, whichdrives both Node3 and Node4 down to initialization voltage Vini.

During normal data refresh period, display pixel 22 may be operated inat least four different types of phases: (1) an initialization/resetphase, (2) an on-bias stress phase, (3) a threshold voltage sampling anddata writing phase, and (4) an emission phase—not necessarily in thisorder. FIG. 4 is a timing diagram showing relevant signal waveforms thatmay be applied to display pixel 22 during normal operation.

Prior to time t1, only signal EM(n) is asserted so pixel 22 is in theemission phase. At time t1, signal EM(n) is deasserted or driven low,which marks the end of the emission phase. At time t2 (at the beginningof the initialization phase), control signals Scan1 (n) and Scan2(n−1)are asserted. Asserting signal Scan2(n−1) will turn on transistors Tini1and Tini2 in parallel, which will drive Node3 and Node4 to Vini. Node3is at the drain terminal of transistor Tdrive, so the correspondingvoltage Vd at Node3 will be initialized to Vini during this time (i.e.,Vd=Vini). Since Node4 is at the anode terminal of light-emitting diode304, setting Node4 to Vini is sometimes referred to as performing “anodereset.” Asserting signal Scan1(n) will turn on transistor Toxide, whichshorts the gate and drain terminals of transistor Tdrive and thereforepulls the voltage at the gate terminal of the drive transistor Vg alsodown to Vini. During the initialization phase, the voltage acrosscapacitor Cst is therefore reset to a predetermined voltage difference(VDDEL−Vini).

Signal Scan2(n−1) is deasserted at time t3 to turn off transistors Tini1and Tini2, which marks the end of the initialization and anode resetphase. Signal Scan1(n) may remain asserted until the subsequent emissionphase (e.g., transistor Toxide will remain on during the entirety of theinitialization phase and the threshold voltage sampling and data writingphases).

At time t4, signal Scan2(n) is pulsed low to temporarily activate dataloading transistor Tdata. Turning on transistor Tdata will load a datavoltage Vdata onto the source terminal of the drive transistor such thatthe voltage Vs at Node1 is set to Vdata (i.e., Vs=Vdata). Since thedrive transistor is currently in the diode-connected configuration(because Toxide is turned on), the drive transistor will pull gatevoltage Vg up to (Vdata−Vth), where Vth represents the threshold voltageof the drive transistor. Thus, the voltage across capacitor Cst is nowset to (VDDEL−Vdata+Vth). As such, drive transistor threshold voltageVth has been successfully sampled and Vdata has been successfullyprogrammed/written onto storage capacitor Cst.

The assertion of signal Scan2(n) at time t4 sets Vs to Vdata, which willthen prompt the drive transistor to pull its gate voltage Vg from Viniup towards (Vdata−Vth). This brief period of time (see shaded portion inFIG. 4) while Vg is charging up to (Vdata−Vth) represents an on-biasstress phase. At the beginning of the on-bias stress phase (i.e., attime t4), the source-to-gate voltage of the drive transistor Vsg may beequal to (Vdata−Vini) so that Vdata is at least partially applied to thedrive transistor prior to any threshold voltage sampling. Applying Vdatato pixel 22 prior to any threshold voltage sampling may be technicallyadvantageous for the following reasons.

In certain situations, threshold voltage Vth can shift, such as whendisplay 14 is transitioning from a black image to a white image or whentransitioning from one gray level to another. This shifting in Vth(sometimes referred to herein as thin-film transistor “hysteresis”) cancause a reduction in luminance, which is otherwise known as “first framedimming.” For example, the saturation current Ids waveform as a functionof Vgs of the drive transistor for a black frame might be slightlyoffset from the target Ids waveform as a function of Vgs of the drivetransistor for a white frame. Without performing on-bias stress, thesampled Vth will correspond to the black frame and will thereforedeviate from the target Ids waveform by quite a large margin. Byperforming on-bias stress, the sampled Vth will correspond to Vdata andwill therefore be much closer to the target Ids curve. Performing theon-bias stress phase to bias the Vsg of the drive transistor with Vdatabefore sampling Vth can therefore help mitigate hysteresis and improvefirst frame response. An on-bias stress phase may therefore be definedas an operation that applies a suitable bias voltage directly to thedrive transistor during non-emission phases (e.g., such as by turning onthe data loading transistor or the initialization transistor). Thus,although FIG. 4 shows Vth sampling and data writing phase as beginningat time t4, only the OBS phase begins at time t4, and the Vth samplingand data programming occurs immediately after the OBS phase (e.g., OBSwill be followed automatically by the Vth sampling and data writingoperation without having turning on any other transistors in pixel 22).

At time t5, signal Scan2(n) is deasserted, which marks the end of theVth sampling the data programming phase. As shown in FIG. 4, the on-biasstress phase has a relatively short duration compared to the rest of theVth sampling and data programming phase. To ensure the efficacy of theon-bias stress, signal Scan2(n) can be pulsed multiple times to performadditional on-bias stress operations. In the example of FIG. 4, signalScan2(n) is pulsed low from time t6 to t7 to trigger a second on-biasstress phase and a second Vth sampling and data programming phase and isagain pulsed low from time t8 to t9 to trigger a third on-bias stressphase and a third Vth sampling and data programming phase. The dataloaded during the final data programming phase (see, e.g., data signalD(n)) represents the actual data value that will be displayed by thisdisplay pixel. The example of FIG. 4 in which three separate on-biasstress phases are performed is merely illustrative. If desired, lessthan three or more than three on-bias stress phases may be provided tohelp reduce the impact of Vth hysteresis.

At time t10, emission control signal EM(n) may again be asserted tosignify the beginning of the emission phase. Asserting signal EM(n) willturn on transistors Tem1 and Tem2, which will pull Vs up to VDDEL. Theresulting source-to-gate voltage Vsg of transistor Tdrive will be equalto VDDEL−(Vdata−Vth). Since the final emission current is proportionalto Vsg minus Vth, the emission current will be independent of Vth since(Vsg−Vth) will be equal to (VDDEL−Vdata+Vth−Vth), where Vth cancels out.This type of operating scheme where the drive transistor thresholdvoltage is internally sampled and canceled out in this way is sometimesreferred to as in-pixel threshold voltage compensation.

In general, each of the row control signals is associated with only oneof the rows in the array of display pixels. In certain embodiments, someof the row control lines can be shared between display pixels inadjacent rows (see, e.g., FIG. 5). As shown in FIG. 5, gate drivercircuitry such gate driver stage 500 may drive row control signals EMand Scan1 that are shared between pixels in two neighboring rows and mayalso drive signal Scan2(2 n−1) that is fed only to the first (odd) rowof pixels 22 and signal Scan2(2 n) that is fed only to second (even) rowof pixels 22. Gate driver stage 500 may represent one stage in a chainof stages in row driver circuitry 18 (see FIG. 2). While signals Scan1and EM can be shared among multiple adjacent rows, signal Scan2 cannotbe shared since it controls the data loading (e.g., different pixelsneed to be loaded with different data signals to maintain full displayresolution).

In the exemplary operation of FIG. 4, the duration for which signalScan1 is high may be much shorter than the duration for which signalScan1 is low (i.e., the emission phase is much longer than thenon-emission phases). Signal Scan1 directly controls transistor Toxidewithin pixel 22. When signal Scan1 is low, transistor Toxide is turnedoff and is subject to negative bias temperature stress (NBTS). Whensignal Scan1 is high, transistor Toxide is turned on and is subject topositive bias temperature stress (PBTS). NBTS can cause oxide transistorthreshold voltage Vth to shift in the negative direction over time,whereas PBTS can cause Vth to shift in the positive direction over time.When the emission phases are much longer than the non-emission phases,NBTS will dominate and may cause a negative drift in Vth over thelifetime of transistor Toxide, which also degrades the reliability ofthat transistor.

To help improve the reliability of the oxide transistor, the durationfor which signal Scan1 is high may be adjusted, lengthened, or optimizedto help balance the NBTS and PBTS (see, e.g., FIG. 6). In the timingdiagram of FIG. 6, the period during which signal Scan1 is asserted maybe extended as shown by dotted portion 600. When signal Scan1(n) isasserted, signals Scan2(n−1) and Scan2(n) may be pulses at least twotimes (as shown in FIG. 6), more than two times, three or more times,four to ten times, 10 or more times, 100 or more times, or any suitablenumber of times to perform the on-bias stress and Vth sampling and dataprogramming operations. By tuning the on-period of the oxide transistorrelative to its off-period, the risk of Vth shift can be minimized andthe oxide TFT lifetime can be improved.

FIG. 7 is a timing diagram illustrating how the on-bias stress phase canbe further optimized to mitigate first frame dimming in accordance withanother suitable arrangement. In contrast to the example of FIG. 4 inwhich signal Scan1 is constantly asserted during the non-emissionperiod, FIG. 7 illustrates how signal Scan1 can be pulsed low during thenon-emission period to provide an enhanced on-bias stress effect.

Prior to time t1, only signal EM(n) is asserted, so pixel 22 is in theemission phase. At time t1, signal EM(n) is deasserted or driven low,which marks the end of the emission phase. Signal Scan1(n) is assertedsome time after t1, which turns on transistor Toxide. At time t2 (at thebeginning of the initialization phase), control signal Scan2(n−1) isasserted or pulsed low. Asserting signal Scan2(n−1) will turn ontransistors Tini1 and Tini2 in parallel, which will drive Node3 andNode4 to Vini. Node3 is at the drain terminal of transistor Tdrive, sothe corresponding voltage Vd at Node3 will be initialized to Vini duringthis time (i.e., Vd=Vini). The OLED anode terminal Node4 will also bereset to Vini. Since signal Scan1(n) is asserted, transistor Toxide willbe on, which shorts the gate and drain terminals of transistor Tdriveand therefore pulls the voltage at the gate terminal of the drivetransistor Vg also down to Vini. During the initialization and anodereset phase, the voltage across capacitor Cst is therefore reset to apredetermined voltage difference (VDDEL−Vini).

Signal Scan2(n−1) is deasserted at time t3 to turn off transistors Tini1and Tini2, which marks the end of the initialization and anode resetphase. Signal Scan1(n) may remain asserted until the subsequent emissionphase (e.g., transistor Toxide will remain on during the entirety of theinitialization phase and the threshold voltage sampling and data writingphases).

At time t4, signal Scan1(n) is deasserted or pulsed low. Driving signalScan1(n) low will turn off transistor Toxide so that the gate and drainterminals of the drive transistor Tdrive is no longer shorted (i.e., sothat the drive transistor is no longer diode-connected). At time t4,control signal Scan2(n) is also pulsed low, which turns on data loadingtransistor Tdata and sets the source terminal voltage Vs to Vdata. Sincethe oxide transistor is turned off, gate terminal voltage Vg stays atinitialization voltage Vini, which will cause the drain terminal voltageVd to be pulled up to Vdata. Note that while transistor Toxide is turnedoff, no in-pixel Vth sampling can occur, so the entire duration fromtime t4 to t5 will serve as the on-bias stress phase. This period duringwhich Scan1(n) is pulsed low from time t4 to t5 can be adjusted oroptimized to improve first frame response of the display. Extending theon-bias stress phase in this way can also help obviate the need toperform multiple smaller on-bias stress operations as shown in theexample of FIG. 4, which can reduce dynamic power consumption. At timet5, scan signal Scan1(n) is reasserted, which turns on transistorToxide.

At time t6, control signal Scan2(n) is asserted or pulsed low, whichsets Vs to Vdata. Since the drive transistor is currently in thediode-connected configuration (because Toxide is enabled), the drivetransistor will pull gate voltage Vg up to (Vdata−Vth). Thus, thevoltage across capacitor Cst is now set to (VDDEL−Vdata+Vth). As such,drive transistor threshold voltage Vth has been successfully sampled andVdata has been successfully programmed/written onto storage capacitorCst. At time t7, signal Scan2(n) is deasserted, which marks the end ofthe Vth sampling and data programming phase.

At time t8, emission control signal EM(n) may again be asserted tosignify the beginning of the emission phase. Asserting signal EM(n) willturn on transistors Tem1 and Tem2, which will pull Vs up to VDDEL. Theresulting source-to-gate voltage Vsg of transistor Tdrive will be equalto VDDEL−(Vdata−Vth). Since the final emission current is proportionalto Vsg minus Vth, the emission current will be independent of Vth since(Vsg−Vth) will be equal to (VDDEL−Vdata+Vth−Vth), where Vth cancels outto achieve the in-pixel threshold voltage compensation.

In addition to performing the “in-pixel” threshold canceling describedabove in connection with FIG. 4 or FIG. 7, “external” threshold voltagecompensation may also be performed using compensation circuitry 17outside of each pixel 22. External variation compensation may, forexample, be performed in the factory, when the display is idle or turnedoff, or in real time (e.g., during blanking intervals between successiveimage frames). While in-pixel threshold voltage compensation helpsreduce hysteresis, external threshold voltage compensation can helpmitigate transistor aging, drive transistor Vth shift over the lifetimeof the display pixel, and other TFT reliability issues. An operatingscheme where both in-pixel and external Vth compensation are achieved issometimes referred to as a “hybrid” threshold voltage compensationdriving scheme.

FIG. 8A is a diagram showing how a display pixel of the type shown inFIG. 3 can be configured to support external current sensing operations.FIG. 8B is a timing diagram showing the behavior of relevant row controlsignals to perform such external current sensing operations. As shown inFIG. 8B, the odd row scan control signal Scan2_odd(n) can be pulsed lowto perform the initialization and anode reset phase, and the even rowscan control signal Scan2_even(n) can then be pulsed low to perform theVth sampling and data programming phase. At some later time (e.g., whenthe display is turned off/idle or during some other time when the useris not viewing the display), both the even and odd Scan2 control signalsare simultaneously asserted while Scan1 is deasserted to perform thecurrent sensing operations.

Referring back to FIG. 8A, a low Scan1(n) turns off transistor Toxide,whereas a low Scan2_even(n) and a low Scan2_odd(n) will turn ontransistors Tdata and Tini1. Emission control signal EM(n) should bedeasserted during this time, which deactivates transistors Tem1 andTem2. Configured in this way, a sensing current can flow from data line310 through transistors Tdata, Tdrive, and Tini1 onto initializationline 308, as indicated by sensing current path 800. Current 800 can bemeasured using sense circuitry 25 (see FIG. 2) to generate compensationdata that is stored in storage circuitry 29. As described above,external Vth compensation via current sensing in combination within-pixel Vth canceling can help minimize any undesired TFT effectsassociated with the threshold voltage of the drive transistor, whichhelps maintain consistent luminance levels over the lifespan of thedisplay.

Display 14 may optionally be configured to support low refresh rateoperation. Operating display 14 using a relatively low refresh rate(e.g., a refresh rate of 1 Hz, 2 Hz, 1-10 Hz, less than 30 Hz, less than60 Hz, or other low rate) may be suitable for applications outputtingcontent that is static or nearly static and/or for applications thatrequire minimal power consumption. FIG. 9 is a diagram of a low refreshrate display driving scheme in accordance with an embodiment. As shownin FIG. 9, display 14 may alternate between a short data refresh period(as indicated by period T_refresh) and an extended vertical blankingperiod (as indicated by period T_blank). As an example, each datarefresh period T_refresh may be approximately 16.67 milliseconds (ms) inaccordance with a 60 Hz data refresh operation, whereas each verticalblanking period T_blank may be approximately 1 second so that theoverall refresh rate of display 14 is lowered to 1 Hz. Configured assuch, refresh duration T_blank can be adjusted to tune the overallrefresh rate of display 14. For example, if the duration of T_blank wastuned to half a second, the overall refresh rate would be increased toapproximately 2 Hz. In the embodiments described herein, T_blank may beat least two times, at least ten times, at least 30 times, or at least60 times longer in duration than T_refresh (as examples).

A schematic diagram of an illustrative organic light-emitting diodedisplay pixel 22 in display 14 that can be used to support low refreshrate operation is shown in FIG. 10. Pixel 22 of FIG. 10 may have similarstructure as pixel 22 shown in FIG. 3 (i.e., pixel 22 in FIG. 10 has thesame number of transistors and capacitor as pixel 22 in FIG. 3).Emission transistors Tem1 and Tem2 have gates configured to receiveemission control signal EM(n) via emission line 312.Semiconducting-oxide transistor Toxide has a gate terminal configured toreceive a first scan control signal SC1(n) via first scan line 314-1.Data loading transistor Tdata has a gate terminal configured to receivesecond scan control signal SC2(n) via second scan line 314-2.

In contrast to the pixel configuration of FIG. 3, the initializationline in display pixel 22 of FIG. 10 is only connected to one transistorwithin pixel 22. As shown in FIG. 10, an initialization transistor Tinihas a source terminal coupled to Node3 (i.e., the drain terminal of thedrive transistor), a gate terminal configured to receive a third scancontrol signal SC3(n) via third scan line 314-3, and a drain terminalcoupled to a dynamic initialization line 308′. Display pixel 22 mayfurther include an anode reset transistor Tar that has a source terminalcoupled to Node4 (i.e., the anode terminal of OLED 304), a gate terminalconfigured to receive scan control signal SC3(n+1) generated from asubsequent row in the array, and a drain terminal coupled to an anodereset line 309. Dynamic initialization line 308′ and anode reset line309 may be separate control lines such that the initialization voltageVdini(n) on line 308′ and the anode reset voltage Var on line 309 can bebiased to different levels during operation of pixel 22.

FIG. 11 is a timing diagram showing relevant signal waveforms that maybe applied to display pixel 22 of FIG. 10 during both the refresh period(sometimes referred to as the “refresh frame”) and the vertical blankingperiod (sometimes referred to as the “vertical blanking frame”). Fromtime t1 to t2, scan control signals SC1(n) and SC3(n) are asserted toperform the initialization phase. During the initialization phase, theinitialization line 308′ is biased at low voltage VL, which will causedrain voltage Vd at Node3 will be pulled down to voltage VL. Sincetransistor Toxide is also on during this time, gate voltage Vg at Node2will also be pulled down to VL. As a result, the voltage acrosscapacitor Cst will be set to a predetermined voltage difference(VDDEL−VL).

At time t3, scan control signal SC2(n) will be pulsed low to perform theVth sampling and data writing phase. As described above in connectionwith FIG. 3, the brief period of time following the assertion of signalSC2(n) where the drive transistor is temporarily activated to chargegate voltage Vg up to (Vdata−Vth) represents a first on-bias stressphase OBS1. By the end of time t4, the source voltage Vs at Node1 willbe set to Vdata, whereas Vg and Vd will both be set to (Vdata−Vth) byvirtue of the diode connection of the drive transistor. Thus, thevoltage across storage capacitor Cst will be set of (VDDEL−Vdata+Vth).

In low refresh rate operation, the vertical blanking frame may be muchlonger than the refresh frame. To prevent Vth drift during the verticalblanking frame, it would be desirable to also implement one or moreon-bias stress phases during the vertical blanking frame. During thevertical blanking frame, however, signals SC1(n) and SC2(n) cannot beasserted to turn on charge up Vs and Vd as a function of Vdata. Thus,another mechanism must be introduced to charge up Vs and Vd. Inaccordance with an embodiment, initialization voltage Vdini(n) may bedynamically raised from low voltage VL to a high voltage VH whileasserting signal SC3(n) to perform a pseudo on-bias stress phase OBS2′during the vertical blanking frame. Voltage VH may be at least equal toor greater than Vdata, which will turn on drive transistor (whose gateis held at (Vdata−Vth) by capacitor Cst) and ensure that voltage Vs atNode1 is also charged to VH.

Initialization voltage Vdini may be dynamically adjusted on a per-rowbasis, so signal Vdini(n) is a row-based signal (e.g., signal Vdini maybe asserted at different times for different rows). In contrast, theanode reset voltage Var may be a fixed direct current (DC) globalvoltage signal. The example of FIG. 11 in which one on-bias stressoperation OBS2′ is performed during the vertical blanking frame ismerely illustrative. In general, two or more on-bias stress operationsOBS2′ may be performed during the vertical blanking frame. For example,on-bias stress operations OBS2′ may be performed at a relatively highfrequency of 30 Hz, 60 Hz, 120 Hz, 240 Hz, 10-240 Hz, or other suitablefrequency.

By inspection, on-bias stress phase OBS2′ from time t7 to t8 isqualitatively different than on-bias stress phase OSB1 from time t3 tot4 (i.e., the duration of the on-bias stress will be different, and theactual voltage applied to the source-drain terminals of the drivetransistor will also be different). This mismatch in OBS1 versus OBS2′might create noticeable flicker.

To help reduce flicker, an additional on-bias stress phase OBS2 can beinserted between the Vth sampling and data programming phase and theemission phase (see, e.g., OBS2 inserted from time t5 to t6). As shownin FIG. 11, additional on-bias stress phase OBS2 in the refresh framemay be qualitatively identical to that of OBS2′ in the vertical blankingframe. For example, signal SC3(n) may be pulsed low for the sameduration, signal Vdini(n) may be dynamically biased to the same VHlevel, and the duration t5-t6 may be equal to the duration t7-t8). Thelonger on-bias stress phase OBS2 will dominate the prior/shorter on-biasstress phase OBS1, and reducing on-bias stress mismatch between therefresh and vertical blanking periods will provide improved displayflicker performance.

In the example of FIG. 11, on-bias stress phase OBS2 is insertedimmediately prior to the emission phase. In certain scenarios, it ispossible for drive transistor threshold Vth to shift during the insertedphase OBS2. For instance, hysteresis and temperature variation couldcause Vth to shift during OBS2, which can lead to undesirable Muraeffects and degraded first frame response.

To prevent first frame response degradation, Vth sampling should beperformed after OBS2 and prior to the emission phase. FIG. 12 is atiming diagram illustrating how a voltage sampling and data programmingoperation can be inserted after the dominant on-bias stress phase OSB2to improve first frame response in accordance with another embodiment.As shown in FIG. 12, a first Vth sampling and data programming phase maybe performed from time t3-t4, dominant on-bias stress phase OBS2 may beperformed from time t5-t6, and a second Vth sampling and dataprogramming phase may be performed from time t7-78 after OBS2 and beforethe emission phase. As described above in connection with FIGS. 3 and11, the brief period of time following the assertion of signal SC2(n) attime t7 where the drive transistor is temporarily activated to chargegate voltage Vg up to (Vdata−Vth) represents a momentary on-bias stressphase OBS3. By the end of time t8, the source voltage Vs at Node1 willbe set to Vdata, whereas Vg and Vd will both be set to (Vdata−Vth) byvirtue of the diode connection of the drive transistor.

Performing another Vth sampling and data programming operation afterOBS2 can help accommodate for any potential Vth drift during OBS2,thereby improving first frame response. Although the short on-biasstress phases such as OBS1 and OBS3 do occur during the refresh frame,the longer on-bias stress phase OBS2 still dominates and if matched withOBS2′ of the vertical planking frame, flicker can be minimized. Anotherpotential issue that could arise to cause mismatch between OBS2 andOBS2′ is that the data signal applied to pixel 22 during the differentperiods might be different. As shown in the example of FIG. 12, Vsgacross the drive transistor during OBS2 could be (VH−(Vdata1−Vth)) whileVsg across the drive transistor during OBS2 might be (VH−(Vdata2−Vth)),where Vdata1 is not equal to Vdata2. If Vdata1≠Vdata2, the on-biasstress voltage between the refresh frame and the vertical blanking framewill be different, which could still result in noticeable flicker and/ora low-gray optical response.

To compensate for any potential mismatch in data signals between OBS2and OBS2′, the row-based initialization voltage Vdini(n) may bedynamically adjusted to slightly different voltage levels and/or theanode reset voltage Var may be dynamically tuned to slightly differentvoltage levels when transitioning between the refresh frame and thevertical blanking frame. FIG. 13 is a timing diagram illustrating howvoltages Vdini(n) and/or Var can be dynamically adjusted to match theon-bias stress during the refresh and the vertical blanking periods. Asshown in FIG. 13, initialization voltage Vdini(n) may be raised from VLto VH during OBS2 of the refresh frame but may be raised from VL to VH′during OBS2′ of the vertical blanking frame. The difference in VH (i.e.,VH′−VH) may be equal to (Vdata2−Vdata1) to help compensate for anymismatch in data signals, thereby eliminating any residual flicker andclosing any undesired luminance gaps when toggling between refresh andvertical blanking frames.

If desired, anode reset voltage Var may also be tuned to help reduce anymismatch between the refresh and the vertical blanking periods. As shownin FIG. 13, anode reset voltage Var may be tuned from a nominal voltagelevel Var_nom during the refresh frame to an adjusted voltage levelVar_adj during the vertical blanking frame. The difference in Var (i.e.,Var_adj−Var_nom) may be any suitable voltage delta to help compensatefor any operational mismatch within pixel 22, thereby eliminating anyresidual flicker and closing any undesired luminance gaps when togglingbetween refresh and vertical blanking frames. In contrast toinitialization voltage Vdini(n), which is a row-based signal, anodereset voltage Var may be a sub-frame based signal (e.g., Var need not beadjusted on a per-row basis but can be adjusted when switching from therefresh frame to the vertical blanking frame). The sub-frame basedtuning of anode reset voltage Var may be performed by itself (withoutraising the initialization voltage to VH′) or in conjunction withraising the initialization voltage to VH′ to minimize undesired displayartifacts and optimize display performance.

FIG. 14A is a diagram showing how a display pixel of the type shown inFIG. 10 can be configured to support external current sensingoperations. FIG. 14B is a timing diagram showing the behavior ofrelevant row control signals to perform such external current sensingoperations. As shown in FIG. 14B, scan control SC3(n) can be pulsed lowto perform the initialization phase, and scan control signal SC2(n) canthen be pulsed low to perform the Vth sampling and data programmingphase. At some later time (e.g., when the display is turned off/idle orduring some other time when the user is not viewing the display), bothcontrol signals SC3(n) and SC2(n) are simultaneously asserted whileSC1(n) is deasserted to perform the current sensing operations.

Referring back to FIG. 14A, a low SC1(n) during the current sensingphase turns off transistor Toxide, whereas a low SC3(n) and a low SC2(n)will turn on transistors Tdata and Tini, respectively. Emission controlsignal EM(n) should be deasserted during this time, which deactivatestransistors Tem1 and Tem2. Configured in this way, a sensing current canflow from data line 310 through transistors Tdata, Tdrive, and Tini ontoinitialization line 308′, as indicated by sensing current path 1400. Theinitialization voltage Vdini(n) should be set to the low voltage VLduring current sensing operations. Current 1400 can be measured usingsense circuitry 25 (see FIG. 2) to generate compensation data that isstored in storage circuitry 29. As described above, external Vthcompensation via current sensing in combination with in-pixel Vthcanceling can help minimize any undesired TFT effects associated withthe threshold voltage of the drive transistor, which helps maintainconsistent luminance levels over the lifespan of the display.

The example of FIG. 13 in which three separate on-bias stress phases(e.g., OBS1, OB2, and OBS3) are performed prior to the emission phase ismerely illustrative. FIG. 15 illustrates another suitable operationalmethod where OBS1 is removed. As shown in FIG. 15, only two separateon-bias stress phases (e.g., OBS2 and OBS3) are performed prior to theemission phase. Thus, scan control signal SC2(n) need to be pulsed onlyonce during each refresh frame (i.e., during OBS3). Note that byremoving OBS1, the leading pulse in SC3(n) can also be removed(comparing FIG. 13 to FIG. 15), which allows OBS2 to be performedimmediately following the emission phase. Operating the display in thisway obviates the need to perform OBS2, which can help save power andimprove performance. The remainder of the display operation is similarto that of FIG. 13 and need not be described again in detail. Ifdesired, voltages Vdini(n) and Var may be dynamically adjusted to helpcompensate for any mismatch in data signals, thereby eliminating anyresidual flicker and closing any undesired luminance gaps when togglingbetween refresh and vertical blanking frames.

FIG. 16 is a timing diagram showing another suitable way for operatingdisplay pixel circuit 22 of the type shown in FIG. 10. As shown in FIG.16, the operations prior to time t6 are performed during theactive/refresh period, whereas the operations after time t6 areperformed during the blanking period. At time t1, the emission signal EMmay be deasserted (e.g., driven high) to begin the active data refreshperiod. During period Δt2, a pre on-bias stress phase (pre-OBS) may beperformed by selectively pulsing signals SC3(n) and SC3(n+1) anddynamically adjusting Vdini(n) from a low voltage level V_(INI_L) to ahigh voltage level V_(INI_H). Asserting signal SC3(n) will turn ontransistor Tini to apply V_(INI_H) to the drain terminal of the drivetransistor, whereas asserting signal SC3(n+3) will turn on transistorTar to perform anode reset for the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC1 high while pulsing signals SC3(n) and SC3(n+1) low. VoltageVdini is back at the V_(INI_L) level. Driving signal SC1 high will turnon n-channel semiconducting-oxide transistor Toxide. Driving signalSC3(n) low will turn on transistor Tini to apply V_(INI_L) to the drainterminal of the drive transistor, whereas driving signal SC3(n+3) highwill turn on transistor Tar to again perform anode reset on the OLED.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2 low while signal SC1 is still high and while signalsSC3(n) and SC3(n+1) remain deasserted. Driving signal SC2 low will turnon transistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on toallow sampling of the threshold voltage Vth of the drive transistor.

During period Δt5, a post on-bias stress phase (post-OBS) may beperformed by selectively pulsing signals SC3(n) and SC3(n+1) whileVdini(n) is adjusted to V_(INI_H). Asserting signal SC3(n) will turn ontransistor Tini to again apply V_(INI_H) to the drain terminal of thedrive transistor, whereas asserting signal SC3(n+3) will turn ontransistor Tar to again perform anode reset at the OLED.

If desired, anode reset voltage Var may be adjusted at time t6 to helpreduce any mismatch between the active and blanking periods. The voltagechange in Var at time t6 may be any suitable voltage delta to helpcompensate for any operational mismatch within pixel 22, therebyeliminating any residual flicker and closing any undesired luminancegaps when toggling between refresh and vertical blanking frames. At timet7, the emission signal EM may be deasserted (e.g., driven high) tobegin the blanking period. During the blanking period, the data signalson the data line may be parked at some predetermined voltage level Vparkto help reduce dynamic power consumption. If desired, V_(INI_H) and Varcan be different between the active and blanking periods. If desired,V_(INI_H), Var, and Vpark may also be different between differentblanking periods.

Note that the pre-OBS phase during Δt2 and the post-OBS phase during Δt5in the active frame will add a first additional post-OBS phase duringΔt8 and a second additional post-OBS phase during Δt9 in the blankingframe. During the blanking period, the pulsing of signal SC3(n+1) willalso serve to carry out at least three corresponding anode resets usingthe adjusted Var voltage. The driving scheme illustrated in connectionwith FIG. 16 may (as an example) be implemented using four gate driverson each side of the pixel array, where the SC2, EM, Vdini, and SC3(n+1)signal drivers are formed on a first side of the array and where theSC1, SC2, SC3, Vdini signal drivers are formed on a second side of thearray, which is equivalent to five total gate drivers.

FIG. 17A illustrates another suitable implementation of display pixel22. The pixel structure of FIG. 17A is similar to the pixel structure ofFIG. 10, except the initialization transistor Tini is now coupled to thegate of the drive transistor and an additional dedicated on-bias stresstransistor Tobs is connected to the source terminal of the drivetransistor. In particular, transistor Tini may be implemented as ann-channel semiconducting-oxide transistor with a first source-drainterminal connected to the gate terminal of the drive transistor, a gateterminal configured to receive a fourth scan control signal SC4, and asecond source-drain terminal connected to an initialization line onwhich initialization voltage Vini is provided. Transistor Tobs may beimplemented as a p-channel silicon transistor with a first source-drainterminal connected to the source terminal of the drive transistor, agate terminal configured to receive the third scan control signal SC3(shared with transistor Tar), and a second source-drain terminalconnected to an on-bias stress line on which on-bias stress voltage Vobsis provided. The on-bias stress voltage Vobs may be set to somepredetermined or suitable voltage level that can be applied to the drivetransistor such that the sampled Vth will correspond as close to thedesired Vdata as possible.

The example of FIG. 17A in which transistors Toxide and Tini areimplemented using n-type semiconducting-oxide transistors while theremaining transistors are implemented using p-type silicon transistorsis merely illustrative. If desired, transistors Toxide and Tini mayalternatively be implemented as p-type semiconducting-oxide transistors;any one or more of the other transistors Tem1, Tem2, Tdrive, Tdata, Tar,and/or Tobs may be implemented as n-type or p-type semiconducting-oxidetransistors or n-type silicon transistors; pixel 22 may include morethan eight or less than eight transistors; pixel 22 may include morethan one capacitor, etc.

FIG. 17B is a timing diagram illustrating the operation of pixel 22shown in FIG. 17A. As shown in FIG. 17A, the operations prior to time t6are performed during the active/refresh period, whereas the operationsafter time t6 are performed during the blanking period. At time t1, theemission signal EM may be deasserted (e.g., driven high) to begin theactive data refresh period. During period Δt2, a pre on-bias stressphase (pre-OBS) may be performed by selectively pulsing signal SC3(n).Asserting signal SC3(n) will turn on transistor Tobs to apply Vobs tothe source terminal of the drive transistor and will also turn ontransistor Tar to perform anode reset for the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC4 high while the other signals are deasserted. Driving signalSC4 high will turn on n-channel semiconducting-oxide transistor Tini toapply initialization voltage Vini to the gate terminal of the drivetransistor. Signal SC3 is high at this time, so no anode reset will beperformed during Δt3.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2 low while signal SC1 is still high and while signalsSC3(n) and SC4 are deasserted. Driving signal SC2 low will turn ontransistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on toallow sampling of the threshold voltage Vth of the drive transistor.

During period Δt5, a post on-bias stress phase (post-OBS) may beperformed by selectively pulsing signal SC3(n). Asserting signal SC3(n)will again turn on transistor Tobs to apply Vobs to the source terminalof the drive transistor and will also turn on transistor Tar to performanode reset at the OLED.

If desired, anode reset voltage Var and the on-bias stress voltage Vobsmay be adjusted at time t6 to help reduce any mismatch between theactive and blanking periods. The voltage change in Var and Vobs at timet6 may be any suitable voltage delta to help compensate for anyoperational mismatch within pixel 22, thereby eliminating any residualflicker and closing any undesired luminance gaps when toggling betweenrefresh and vertical blanking frames. At time t7, the emission signal EMmay be deasserted (e.g., driven high) to begin the blanking period.During the blanking period, the data signals on the data line may beparked at some predetermined voltage level Vpark to help reduce dynamicpower consumption. If desired, Vobs and Var can be different between theactive and blanking periods. If desired, Vobs, Var, and Vpark may alsobe different between different blanking periods.

Note that the pre-OBS/anode reset (AR) phase during Δt2 and thepost-OBS/anode reset phase during Δt5 in the active frame will add afirst additional post-OBS/AR phase during Δt8 and a second additionalpost-OBS/AR phase during Δt9 in the blanking frame. During the blankingperiod, the pulsing of signal SC3 will serve to carry out at least twocorresponding anode resets using the adjusted Var voltage. The drivingscheme illustrated in connection with FIG. 17A/B may (as an example) beimplemented using three gate drivers on each side of the pixel array,where the SC1, SC2, and EM signal drivers are formed on a first side ofthe array and where the SC2, SC3, an SC4 signal drivers are formed on asecond side of the array, which is equivalent to five total gatedrivers.

FIG. 18A illustrates another suitable implementation of display pixel22. The pixel structure of FIG. 18A is similar to the pixel structure ofFIG. 17A, except the initialization transistor Tini is now controlled bySC1(n−2), which is the SC1 signal from two rows above. Similar to theexample of FIG. 17A, transistor Tini of FIG. 18A may be implemented asan n-channel semiconducting-oxide transistor. The example of FIG. 18A inwhich transistors Toxide and Tini are implemented using n-typesemiconducting-oxide transistors while the remaining transistors areimplemented using p-type silicon transistors is merely illustrative. Ifdesired, transistors Toxide and Tini may alternatively be implemented asp-type semiconducting-oxide transistors; any one or more of the othertransistors Tem1, Tem2, Tdrive, Tdata, Tar, and/or Tobs may beimplemented as n-type or p-type semiconducting-oxide transistors orn-type silicon transistors; pixel 22 may include more than eight or lessthan eight transistors; pixel 22 may include more than one capacitor,etc.

FIG. 18B is a timing diagram illustrating the operation of pixel 22shown in FIG. 18A. As shown in FIG. 18A, the operations prior to time t6are performed during the active/refresh period, whereas the operationsafter time t6 are performed during the blanking period. At time t1, theemission signal EM may be deasserted (e.g., driven high) to begin theactive period. During period Δt2, a pre-OBS/AR phase may be performed byselectively pulsing signal SC3(n). Asserting signal SC3(n) will turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetfor the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC1(n−2) high while the other signals are deasserted. Drivingsignal SC1(n−2) high will turn on n-channel semiconducting-oxidetransistor Tini to apply initialization voltage Vini to the gateterminal of the drive transistor. Signal SC3 is high at this time, so noanode reset will be performed during Δt3.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2 low while signal SC1(n) is still high and whilesignals SC3 and SC1(n−2) are deasserted. Driving signal SC2 low willturn on transistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on toallow sampling of the threshold voltage Vth of the drive transistor.

During period Δt5, a post-OBS/AR phase may be performed by selectivelypulsing signal SC3(n). Asserting signal SC3(n) will again turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetat the OLED.

If desired, anode reset voltage Var and the on-bias stress voltage Vobsmay be adjusted at time t6 to help reduce any mismatch between theactive and blanking periods. The voltage change in Var and Vobs at timet6 may be any suitable voltage delta to help compensate for anyoperational mismatch within pixel 22, thereby eliminating any residualflicker and closing any undesired luminance gaps when toggling betweenrefresh and vertical blanking frames. At time t7, the emission signal EMmay be deasserted (e.g., driven high) to begin the blanking period.During the blanking period, the data signals on the data line may beparked at some predetermined voltage level Vpark to help reduce dynamicpower consumption. If desired, Vobs and Var can be different between theactive and blanking periods. If desired, Vobs, Var, and Vpark may alsobe different between different blanking periods.

Note that the pre-OBS/AR phase during Δt2 and the post-OBS/AR phaseduring Δt5 in the active frame will add a first additional post-OBS/ARphase during Δt8 and a second additional post-OBS/AR phase during Δt9 inthe blanking frame. During the blanking period, the pulsing of signalSC3 will serve to carry out at least two corresponding anode resetsusing the adjusted Var voltage. The driving scheme illustrated inconnection with FIG. 18A/B may (as an example) be implemented usingthree gate drivers on each side of the pixel array, where the SC1, SC2,and SC3 signal drivers are formed on a first side of the array and wherethe SC1, SC2, and EM signal drivers are formed on a second side of thearray, which is equivalent to only four total gate drivers.

FIG. 19A illustrates yet another suitable implementation of displaypixel 22. The pixel structure of FIG. 19A is similar to the pixelstructure of FIG. 18A, except the initialization transistor Tini is nowcoupled to the drain terminal of the drive transistor. In particular,transistor Tini may have a first source-drain terminal connected to thedrain terminal of the drive transistor, a gate terminal configured toreceive fourth scan control signal SC4, and a second source-drainterminal connected to an initialization line on which initializationvoltage Vini is provided. Unlike the example of FIG. 18A, transistorTini of FIG. 19A may be implemented as a p-channel silicon transistor.The example of FIG. 19A in which only transistor Toxide is implementedusing an n-type semiconducting-oxide transistor while the remainingtransistors are implemented using p-type silicon transistors is merelyillustrative. If desired, transistor Toxide may alternatively beimplemented as a p-type semiconducting-oxide transistor; transistor Tinimay be implemented as an n-type or p-type semiconducting-oxidetransistor; any one or more of the other transistors Tem1, Tem2, Tdrive,Tdata, Tar, and/or Tobs may be implemented as n-type or p-typesemiconducting-oxide transistors or n-type silicon transistors; pixel 22may include more than eight or less than eight transistors; pixel 22 mayinclude more than one capacitor, etc.

FIG. 19B is a timing diagram illustrating the operation of pixel 22shown in FIG. 19A. As shown in FIG. 19A, the operations prior to time t6are performed during the active/refresh period, whereas the operationsafter time t6 are performed during the blanking period. At time t1, theemission signal EM may be deasserted (e.g., driven high) to begin theactive period. During period Δt2, a pre-OBS/AR phase may be performed byselectively pulsing signal SC3(n). Asserting signal SC3(n) will turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetfor the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC4 low while signal SC1 is high. Driving signal SC4 low willturn on p-channel silicon transistor Tini to apply initializationvoltage Vini to the drain terminal of the drive transistor. Signal SC3is high at this time, so no anode reset will be performed during Δt3.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2 low while signal SC1 is still high and while signalsSC3 and SC4 are deasserted. Driving signal SC2 low will turn ontransistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on(since SC1 is high) to allow sampling of the threshold voltage Vth ofthe drive transistor.

During period Δt5, a post-OBS/AR phase may be performed by selectivelypulsing signal SC3(n). Asserting signal SC3(n) will again turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetat the OLED.

If desired, anode reset voltage Var and the on-bias stress voltage Vobsmay be adjusted at time t6 to help reduce any mismatch between theactive and blanking periods. The voltage change in Var and Vobs at timet6 may be any suitable voltage delta to help compensate for anyoperational mismatch within pixel 22, thereby eliminating any residualflicker and closing any undesired luminance gaps when toggling betweenrefresh and vertical blanking frames. At time t7, the emission signal EMmay be deasserted (e.g., driven high) to begin the blanking period.During the blanking period, the data signals on the data line may beparked at some predetermined voltage level Vpark to help reduce dynamicpower consumption. If desired, Vobs and Var can be different between theactive and blanking periods. If desired, Vobs, Var, and Vpark may alsobe different between different blanking periods.

Note that the pre-OBS/AR phase during Δt2 and the post-OBS/AR phaseduring Δt5 in the active frame will add a first additional post-OBS/ARphase during Δt8 and a second additional post-OBS/AR phase during Δt9 inthe blanking frame. During the blanking period, the pulsing of signalSC3 will serve to carry out at least two corresponding anode resetsusing the adjusted Var voltage. The driving scheme illustrated inconnection with FIG. 19A/B may (as an example) be implemented usingthree gate drivers on each side of the pixel array, where the SC2, SC3,and SC4 signal drivers are formed on a first side of the array and wherethe SC1, SC2, and EM signal drivers are formed on a second side of thearray, which is equivalent to five total gate drivers.

FIG. 20A illustrates yet another suitable implementation of displaypixel 22. The pixel structure of FIG. 20A is similar to the pixelstructure of FIG. 19A, except the initialization transistor Tini is nowcontrolled by SC2(n−1), a SC2 signal from one row above. FIG. 20B is atiming diagram illustrating the operation of pixel 22 shown in FIG. 20A.As shown in FIG. 20A, the operations prior to time t6 are performedduring the active/refresh period, whereas the operations after time t6are performed during the blanking period. At time t1, the emissionsignal EM may be deasserted (e.g., driven high) to begin the activeperiod. During period Δt2, a pre-OBS/AR phase may be performed byselectively pulsing signal SC3(n). Asserting signal SC3(n) will turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetfor the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC2(n−1) low while signal SC1 is high. Driving signal SC2(n−1)low will turn on p-channel silicon transistor Tini to applyinitialization voltage Vini to the drain terminal of the drivetransistor. Signal SC3 is high at this time, so no anode reset will beperformed during Δt3.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2(n) low while signal SC1 is still high and whilesignals SC3 and SC2(n−1) are deasserted. Driving signal SC2(n) low willturn on transistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on(since SC1 is high) to allow sampling of the threshold voltage Vth ofthe drive transistor.

During period Δt5, a post-OBS/AR phase may be performed by selectivelypulsing signal SC3(n). Asserting signal SC3(n) will again turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetat the OLED.

If desired, anode reset voltage Var and the on-bias stress voltage Vobsmay be adjusted at time t6 to help reduce any mismatch between theactive and blanking periods. The voltage change in Var and Vobs at timet6 may be any suitable voltage delta to help compensate for anyoperational mismatch within pixel 22, thereby eliminating any residualflicker and closing any undesired luminance gaps when toggling betweenrefresh and vertical blanking frames. At time t7, the emission signal EMmay be deasserted (e.g., driven high) to begin the blanking period.During the blanking period, the data signals on the data line may beparked at some predetermined voltage level Vpark to help reduce dynamicpower consumption. If desired, Vobs and Var can be different between theactive and blanking periods. If desired, Vobs, Var, and Vpark may alsobe different between different blanking periods.

Note that the pre-OBS/AR phase during Δt2 and the post-OBS/AR phaseduring Δt5 in the active frame will add a first additional post-OBS/ARphase during Δt8 and a second additional post-OBS/AR phase during Δt9 inthe blanking frame. The driving scheme illustrated in connection withFIG. 20A/B may (as an example) be implemented using three gate driverson each side of the pixel array, where the SC1, SC2, and SC3 signaldrivers are formed on a first side of the array and where the SC1, SC2,and EM signal drivers are formed on a second side of the array, which isequivalent to four total gate drivers.

FIG. 21A illustrates yet another suitable implementation of displaypixel 22. The pixel structure of FIG. 21A is similar to the pixelstructure of FIG. 19A, except the initialization transistor Tini is nowcontrolled by SC3(n−7), a SC3 signal from seven rows above. FIG. 21B isa timing diagram illustrating the operation of pixel 22 shown in FIG.21A. As shown in FIG. 21A, the operations prior to time t6 are performedduring the active/refresh period, whereas the operations after time t6are performed during the blanking period. At time t1, the emissionsignal EM may be deasserted (e.g., driven high) to begin the activeperiod. During period Δt2, a pre-OBS/AR phase may be performed byselectively pulsing signal SC3(n). Asserting signal SC3(n) will turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetfor the OLED.

During period Δt3, an initialization phase may be carried out by pulsingsignal SC3(n−7) low while signal SC1 is high. Driving signal SC3(n−7)low will turn on p-channel silicon transistor Tini to applyinitialization voltage Vini to the drain terminal of the drivetransistor. Signal SC3 is high at this time, so no anode reset will beperformed during Δt3.

During period Δt4, a data programming/sampling phase may be performed bypulsing signal SC2(n) low while signal SC1 is still high and whilesignals SC3 and SC3(n−7) are deasserted. Driving signal SC2(n) low willturn on transistor Tdata to load the desired data signal onto the sourceterminal of the drive transistor while transistor Toxide is kept on(since SC1 is high) to allow sampling of the threshold voltage Vth ofthe drive transistor.

During period Δt5, a post-OBS/AR phase may be performed by selectivelypulsing signal SC3(n). Asserting signal SC3(n) will again turn ontransistor Tobs to apply Vobs to the source terminal of the drivetransistor and will also turn on transistor Tar to perform anode resetat the OLED.

If desired, anode reset voltage Var and the on-bias stress voltage Vobsmay be adjusted at time t6 to help reduce any mismatch between theactive and blanking periods. The voltage change in Var and Vobs at timet6 may be any suitable voltage delta to help compensate for anyoperational mismatch within pixel 22, thereby eliminating any residualflicker and closing any undesired luminance gaps when toggling betweenrefresh and vertical blanking frames. At time t7, the emission signal EMmay be deasserted (e.g., driven high) to begin the blanking period.During the blanking period, the data signals on the data line may beparked at some predetermined voltage level Vpark to help reduce dynamicpower consumption. If desired, Vobs and Var can be different between theactive and blanking periods. If desired, Vobs, Var, and Vpark may alsobe different between different blanking periods.

Note that the pre-OBS/AR phase during Δt2 and the post-OBS/AR phaseduring Δt5 in the active frame will add a first additional post-OBS/ARphase during Δt8 and a second additional post-OBS/AR phase during Δt9 inthe blanking frame. The driving scheme illustrated in connection withFIG. 21A/B may (as an example) be implemented using three gate driverson each side of the pixel array, where the SC1, SC2, and SC3 signaldrivers are formed on a first side of the array and where the SC1, SC2,and EM signal drivers are formed on a second side of the array, which isequivalent to four total gate drivers.

The embodiments of FIGS. 1-21 describing display pixels 22 operable tosupport in-pixel Vth canceling and external current sensing are merelyillustrative and are not intended to limit the scope of the presentembodiments. In general, pixels 22 may be modified to include more thanseven or less than seven thin-film transistors and can include more orless capacitors. The polarity of any of the pixel transistors can beflipped (e.g., p-type transistors can instead be implemented usingn-type transistors and vice versa). More than one emission controlsignal can be used per row (e.g., transistor Tem1 might be controlledusing a first emission signal EM1, whereas transistor Tem2 might becontrolled using a second separate emission signal EM2). More than twoor less than two scan control signal can be used per row, where eachscan control signal can optionally be shared among two or moreneighboring rows of display pixels. If desired, other ways ofimplementing on-bias stress in high refresh rate or low refresh ratedisplay can be adopted to mitigate the impact of hysteresis and minimizeflicker.

The foregoing is merely illustrative and various modifications can bemade by those skilled in the art without departing from the scope andspirit of the described embodiments. The foregoing embodiments may beimplemented individually or in any combination.

What is claimed is:
 1. A display pixel, comprising: a drive transistorhaving a gate terminal, a source terminal, and a drain terminal; asemiconducting-oxide transistor coupled across the gate terminal and thedrain terminal of the drive transistor; a storage capacitor connected tothe gate terminal of the drive transistor; a data loading transistorconnected to the source terminal of the drive transistor; alight-emitting diode coupled in series with the drive transistor,wherein the light-emitting diode comprises an anode terminal and acathode terminal; and an anode reset transistor connected to the anodeterminal of the light-emitting diode, wherein the anode reset transistoris configured to receive a dynamically adjustable anode reset voltage.2. The display pixel of claim 1, further comprising: an initializationtransistor connected to the drain terminal of the drive transistor. 3.The display pixel of claim 2, further comprising: an emission transistorcoupled between the initialization transistor and the anode resettransistor.
 4. The display pixel of claim 3, wherein the initializationtransistor is configured to receive a dynamically adjustableinitialization voltage.
 5. The display pixel of claim 1, furthercomprising: an additional semiconducting-oxide transistor connected tothe gate terminal of the drive transistor.
 6. The display pixel of claim5, wherein the semiconducting-oxide transistor is configured to receivea gate driver signal intended for the display pixel in a given row of adisplay pixel array, and wherein the additional semiconducting-oxidetransistor is configured to receive a gate driver signal intended forother display pixels in another row preceding the given row in thedisplay pixel array.
 7. A display pixel, comprising: an organiclight-emitting diode having an anode and a cathode; a drive transistorcoupled in series with the organic light-emitting diode, wherein thedrive transistor has a drain terminal, a gate terminal, and a sourceterminal, and wherein the drive transistor is a p-type silicontransistor; a semiconducting-oxide transistor coupled between the gateand drain terminals of the drive transistor, wherein thesemiconducting-oxide transistor exhibits lower leakage than the drivetransistor; and a data loading transistor coupled between the sourceterminal of the drive transistor and a data line, wherein the dataloading transistor is activated while the semiconducting-oxidetransistor is on to perform a first on-bias stress phase followed by athreshold voltage sampling and data writing phase, and wherein the dataloading transistor is configured to apply a data voltage at leastpartially onto the drive transistor during the first on-bias stressphase; an initialization line on which an initialization voltage isprovided; an initialization transistor coupled between the drainterminal of the drive transistor and the initialization line, whereinthe initialization transistor is turned on after the threshold voltagesampling and data writing phase to perform a second on-bias stressphase.
 8. The display pixel of claim 7, wherein the initializationvoltage is dynamically adjustable.
 9. The display pixel of claim 8,wherein the initialization voltage is dynamically raised from a lowvoltage level to a high voltage level during at least a portion of thesecond on-bias stress phase.
 10. The display pixel of claim 9, furthercomprising: first and second emission transistors coupled in series withthe drive transistor and the organic light-emitting diode, wherein thefirst and second emission transistors are turned on during an emissionphase after the second on-bias stress phase.
 11. The display pixel ofclaim 10, wherein the data loading transistor is activated while thesemiconducting-oxide transistor is on to perform a third on-bias stressphase followed by an additional threshold voltage sampling and datawriting phase, and wherein the second on-bias stress phase and theadditional threshold voltage sampling and data writing phase occur afterthe second on-bias stress phase and before the emission phase.
 12. Thedisplay pixel of claim 11, wherein the second on-bias stress phase islonger than the first and third on-bias stress phases.
 13. The displaypixel of claim 11, wherein the first, second, and third on-bias stressphases are performed during a refresh frame, and wherein theinitialization transistor is turned on during a vertical blanking frameto perform a fourth on-bias stress phase that matches with the secondon-bias stress phase to reduce flicker.
 14. The display pixel of claim13, wherein the initialization voltage is dynamically raised from thelow voltage level to the high voltage level during at least a portion ofthe fourth on-bias stress phase.
 15. The display pixel of claim 13,wherein the initialization voltage is dynamically raised from the lowvoltage level to another voltage level different than the high voltagelevel during at least a portion of the fourth on-bias stress phase tohelp match the amount of stress between the second on-bias stress phaseand the fourth on-bias stress phase.
 16. The display pixel of claim 13,further comprising: an anode reset transistor coupled between the anodeof the organic light-emitting diode and an anode reset line on which ananode reset voltage is provided, wherein the anode reset voltageexhibits a first voltage level during the refresh frame and isdynamically adjusted to a second voltage level that is different thanthe first voltage level during the vertical blanking frame.
 17. Thedisplay pixel of claim 16, wherein the initialization transistor, thefirst and second emission transistors, data loading transistor, andanode reset transistor are all p-type silicon transistors.
 18. Thedisplay pixel of claim 8, wherein the initialization transistor and thedata loading transistor are turned on to perform external currentsensing operations to help compensate for transistor aging effectswithin the display pixel.
 19. A method of operating a display pixel thatincludes a light-emitting diode and a drive transistor coupled in serieswith the light-emitting diode, the method comprising: turning on asemiconducting-oxide transistor that is coupled between gate and drainterminals of the drive transistor, wherein the semiconducting-oxidetransistor exhibits lower leakage than the drive transistor; and whilethe semiconducting-oxide transistor is on, activating a data loadingtransistor that is coupled between a source terminal of the drivetransistor and a data line to perform a first on-bias stress operationto apply a data voltage at least partially onto the drive transistor,wherein the first on-bias stress operation is followed automatically bya threshold voltage sampling and data writing operation without havingto turn on any other transistors in the display pixel.
 20. The method ofclaim 19, further comprising: with an initialization transistor coupledbetween the drain terminal of the drive transistor and an initializationline on which an initialization voltage is provided, initializing thedrain terminal of the drive transistor to a low voltage level; turningon the initialization transistor after the threshold voltage samplingand data writing operation to perform a second on-bias stress operation;and dynamically raising the initialization voltage from the low voltagelevel to a high voltage level during at least a portion of the secondon-bias stress operation.
 21. The method of claim 20, furthercomprising: during an emission phase, turning on emission transistorscoupled in series with the drive transistor and the light-emittingdiode.
 22. The method of claim 21, wherein the first and second on-biasstress operations are performed during a refresh period, furthercomprising: turning on the initialization transistor on during avertical blanking period to perform a third on-bias stress operationthat matches with the second on-bias stress operation to reduce flicker.23. The method of claim 22, further comprising: dynamically raising theinitialization voltage from the low voltage level to another voltagelevel that is different than the high voltage level during at least aportion of the third on-bias stress operation to help match the amountof stress between the second on-bias stress operation and the thirdon-bias stress operation.
 24. The method of claim 22, furthercomprising: with an anode reset transistor coupled to the light-emittingdiode, supplying a first voltage level to the display pixel during therefresh period and supplying a second voltage level that is differentthan the first voltage level to the display pixel during the verticalblanking period.
 25. The method of claim 20, further comprising: turningon the initialization transistor before the threshold voltage samplingand data writing operation to perform a third on-bias stress operation;and dynamically raising the initialization voltage from the low voltagelevel to the high voltage level during at least a portion of the thirdon-bias stress operation.
 26. The method of claim 20, wherein thethreshold voltage sampling helps achieve in-pixel threshold voltagecanceling, the method further comprising: turning on the data loadingtransistor and the initialization transistor to perform externalthreshold voltage compensation in addition to the in-pixel thresholdvoltage canceling.